SAMSUNG INTERNAL SSD M.2 PCIe 2280 – 256GB
256GB Storage Capacity
M.2 Form Factor
PCIe 2.0 x4 Interface
Up to 3400 MB/s Sequential Read Speed
Up to 2500 MB/s Sequential Write Speed
Up to 410,000 Random-Read IOPS
Up to 330,000 Random-Write IOPS
3D NAND Technology
Up to 300 TBW
Compatible with Windows 10, 8.1, and 7
| Settings | Samsung 256GB M.2 PCIe 2280 Internal SSD remove | Lexar NM100 128GB M.2 SATA III 2280 Internal SSD remove | TwinMos H2 Ultra 256GB 2.5″ SATA Internal SSD remove | Lexar LNM620 512GB M.2 PCIe Gen 3*4 NVMe 2280 Internal SSD remove | Lexar LNM620 1TB M.2 PCIe Gen 3*4 NVMe 2280 Internal SSD remove | Hikvision Desire SSD 512GB PCIe Gen 3 x 4, NVMe remove |
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| Name | Samsung 256GB M.2 PCIe 2280 Internal SSD remove | Lexar NM100 128GB M.2 SATA III 2280 Internal SSD remove | TwinMos H2 Ultra 256GB 2.5″ SATA Internal SSD remove | Lexar LNM620 512GB M.2 PCIe Gen 3*4 NVMe 2280 Internal SSD remove | Lexar LNM620 1TB M.2 PCIe Gen 3*4 NVMe 2280 Internal SSD remove | Hikvision Desire SSD 512GB PCIe Gen 3 x 4, NVMe remove |
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| SKU | LNM100-128RB | LNM620X512G-RNNNG | LNM620X001T-RNNNG | |||
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| Price | KSh6,000 | KSh3,800 | KSh4,500 | KSh9,000 | KSh14,500 | KSh6,450 |
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| Description | ||||||
| Content | SAMSUNG INTERNAL SSD M.2 PCIe 2280 - 256GB 256GB Storage Capacity M.2 Form Factor PCIe 2.0 x4 Interface Up to 3400 MB/s Sequential Read Speed Up to 2500 MB/s Sequential Write Speed Up to 410,000 Random-Read IOPS Up to 330,000 Random-Write IOPS 3D NAND Technology Up to 300 TBW Compatible with Windows 10, 8.1, and 7 | LEXAR NM100 INTERNAL SSD M.2 SATA III 2280 128GB - LNM100-128RB Specification Form Factor: M.2 2280 Interface: SATA III (6Gb/s) Performance: sequential read up to 550 MB/s IOPS: up to 75/75K Operating Temperature: 0°C to 70°C (32°F to 158°F) Storage Temperature: -40°C to 85°C (-40°F to 185°F) Dimension (L x W x H): 80 mm x 22 mm x 2.25 mm / 3.15” x 0.87” x 0.09” Weight: 9g Shock Resistant: 1500 G, duration 0.5ms, Half Sine Wave Vibration Resistant: 10~2000Hz, 1.5mm, 20 G, 1 Oct/min, 30min/axis(X,Y,Z) TBW: 75 TB DWPD: 1 TB: 0.46, 512 GB: 0.46, 256 GB: 0.44 NAND flash: 3D TLC MTBF: 1,500,000 Hours | The TwinMOS SSD is an excellent choice for a SATA-based solid-state drive (SSD) in an existing PC or MAC desktop or laptop computer. The H2 Ultra SSD is designed to be high performance and help realize faster booting times, quicker application launches, and better overall system performance. TwinMOS features a powerful controller and exceptional transfer speeds, the 2.5 inch SSD easily handles everyday computing tasks as well as demanding multimedia applications. Highlights - A SATA-based 2.5-inch solid-state drive (SSD) in an existing PC or MAC desktop or laptop computer. - Up to 580 Mb/s sequential read and 580 Mb/s sequential write speed. - Space-saving and compact 2.5-inch form factor, Smart Command/NCQ/Trom Support, Dura Write/RAISE Support, RoHS compliant -Fully compatible with devices and OS that support the SATA/SATA II standard -Non-volatile Flash Memory for outstanding data retention | LEXAR LNM620 INTERNAL SSD M.2 PCIe Gen 3*4 NVMe 2280 - 512GB Product Number: LNM620X512G-RNNNG Form Factor: M.2 2280 Interface: PCIe Gen3x4 Performance: sequential read up to 3300MB/s, write up to 1300MB/s Operating Temperature: 0°C to 70°C (32°F to 158°F) Storage Temperature: -40°C to 85°C (-40°F to 185°F) Dimension (L x W x H): 80 mm x 22 mm x 2.25 mm / 3.15” x 0.87” x 0.09” Weight: 9g Shock Resistant: 1500 G, duration 0.5ms, Half Sine Wave Vibration Resistant: 10~2000Hz, 1.5mm, 20 G, 1 Oct/min, 30min/axis(X,Y,Z) TBW: 250 TB DWPD: 0.44 NAND flash: 3D TLC MTBF: 1,500,000 Hours | LEXAR LNM620 INTERNAL SSD M.2 PCIe Gen 3*4 NVMe 2280 - 1TB - LNM620X001T-RNNNG Form Factor: M.2 2280 Interface: PCIe Gen3x4 Performance: sequential read up to 3300MB/s, write up to 1300MB/s Operating Temperature: 0°C to 70°C (32°F to 158°F) Storage Temperature -40°C to 85°C (-40°F to 185°F) Dimension (L x W x H): 80 mm x 22 mm x 2.25 mm / 3.15” x 0.87” x 0.09” Weight: 9g Shock Resistant: 1500 G, duration 0.5ms, Half Sine Wave Vibration Resistant: 10~2000Hz, 1.5mm, 20 G, 1 Oct/min, 30min/axis(X,Y,Z) TBW: 500 TB DWPD: 0.44 NAND flash: 3D TLC MTBF: 1,500,000 Hours | Interface M.2 NVMe Designed for maximum reliability in streaming High Definition Audio/Video NAND Flash technology offering potential for higher capacity, performance and stability Capacity: 512GB Data Transfer speed: up to 2100MB/s read, 1800MB/s write Power Consumption: 3.5W |
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